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| L6571A L6571B HIGH VOLTAGE HALF BRIDGE DRIVER WITH OSCILLATOR s s s s HIGH VOLTAGE RAIL UP TO 600V BCD OFF LINE TECHNOLOGY 15.6V ZENER CLAMP ON VS DRIVER CURRENT CAPABILITY: - SINK CURRENT = 270mA - SOURCE CURRENT = 170mA VERY LOW START UP CURRENT: 150A UNDER VOLTAGE LOCKOUT WITH HYSTERESIS PROGRAMMABLE OSCILLATOR FREQUENCY DEAD TIME 1.25s (L6571A) or 0.72s (L6571B) dV/dt IMMUNITY UP TO 50V/ns ESD PROTECTION s s s s s s Minidip SO8 ORDERING NUMBERS: L6571A L6571AD L6571B L6571BD tor. The internal circuitry of the device allows it to be driven also by external logic signal. The output drivers are designed to drive external nchannel power MOSFET and IGBT. The internal logic assures a dead time to avoid cross-conduction of the power devices. Two version are available: L6571A and L6571B. They differ in the internal dead time: 1.25s and 0.72s (typ.) DESCRIPTION The device is a high voltage half bridge driver with built in oscillator. The frequency of the oscillator can be programmed using external resistor and capaciBLOCK DIAGRAM H.V. CVS VS 1 RHV BOOT 8 BIAS REGULATOR LEVEL SHIFTER 7 HIGH SIDE DRIVER HVG CBOOT VS RF RF CF COMP 2 BUFFER 6 OUT LOAD CF 3 COMP VS LOGIC LOW SIDE DRIVER 5 D96IN433 LVG GND 4 September 2000 1/8 L6571A L6571B ABSOLUTE MAXIMUM RATINGS Symbol IS (*) VCF VLVG VOUT VHVG VBOOT VBOOT/OUT dVBOOT/dt dVOUT/dt Tstg Tj Tamb Supply Current Oscillator Resistor Voltage Low Side Switch Gate Output High Side Switch Source Output High Side Switch Gate Output Floating Supply Voltage Floating Supply vs OUT Voltage VBOOT Slew Rate (Repetitive) VOUT Slew Rate (Repetitive) Storage Temperature Junction Temperature Ambient Temperature (Operative) Parameter Value 25 18 14.6 -1 to VBOOT - 18 -1 to VBOOT 618 18 50 50 -40 to 150 -40 to 150 -40 to 125 Unit mA V V V V V V V/ns V/ns C C C (*)The device has an internal zener clamp between GND and VS (typical 15.6V).Therefore the circuit should not be driven by a DC low impedance power source. Note: ESD immunity for pins 6, 7 and 8 is guaranteed up to 900 V (Human Body Model) THERMAL DATA Symbol Rth j-amb Parameter Thermal Resistance Junction-Ambient Max Minidip 100 SO8 150 Unit C/W RECOMMENDED OPERATING CONDITIONS Symbol VS VBOOT VOUT fout Supply Voltage Floating Supply Voltage High Side Switch Source Output Oscillation Frequency Parameter Min. 10 -1 Max. VCL 500 VBOOT -VCL 200 Unit V V V kHz PIN CONNECTION VS RF CF GND 1 2 3 4 D94IN059 8 7 6 5 BOOT HVG OUT LVG 2/8 L6571A L6571B PIN FUNCTION N 1 2 Pin VS RF Description Supply input voltage with internal clamp [typ. 15.6V] Oscillator timing resistor pin. A buffer set alternatively to VS and GND can provide current to the external resistor RF connected between pin 2 and 3. Alternatively, the signal on pin 2 can be used also to drive another IC (i.e. another L6569/71 to drive a full H-bridge) Oscillator timing capacitor pin. A capacitor connected between this pin and GND fixes (together with RF) the oscillating frequency Alternatively an external logic signal can be applied to the pin to drive the IC. Ground Low side driver output. The output stage can deliver 170mA source and 270mA sink [typ.values]. Upper driver floating reference High side driver output. The output stage can deliver 170mA source and 270mA sink [typ.values]. Bootstrap voltage supply. It is the upper driver floating supply. 3 CF 4 5 6 7 8 GND LVG OUT HVG BOOT ELECTRICAL CHARACTERISTCS (VS = 12V; VBOOT - VOUT = 12V; Tj = 25C; unless otherwise specified.) Symbol VSUVP VSUVN VSUVH VCL ISU Iq IBOOTLK IOUTLK IHVG SO IHVG SI ILVG SO ILVG SI VRFON VRF OFF VCFU VCFL td 3 2 5 8 6 7 Pin 1 Parameter VS Turn On Threshold VS Turn Off Threshold VS Hysteresis VS Clamping Voltage Start Up Current Quiescent Current Leakage Current BOOT pin vs GND Leakage Current OUT pin vs GND High Side Driver Source Current High Side Driver Sink Current Low Side Driver Source Current Low Side Driver Sink Current RF High Level Output Voltage RF Low Level Output Voltage CF Upper Threshold CF Lower Threshold Internal Dead Time L6571A L6571B IS = 5mA VS < VSUVN VS > VSUVP VBOOT = 580V VOUT = 562V VHVG = 6V VHVG = 6V VLVG = 6V VLVG = 6V IRF = 1mA IRF = -1mA 110 190 110 190 VS -0.05 50 7.7 3.80 0.85 0.50 8 4 1.25 0.72 175 275 175 275 VS -0.2 200 8.2 4.3 1.65 0.94 Test Condition Min. 8.3 7.3 0.7 14.6 Typ. 9 8 1 15.6 150 500 Max. 9.7 8.7 1.3 16.6 250 700 5 5 Unit V V V V A A A A mA mA mA mA V mV V V s s 3/8 L6571A L6571B ELECTRICAL CHARACTERISTCS (continued) Symbol DC Pin Parameter Duty Cycle, Ratio Between Dead Time + Conduction Time of High Side and Low Side Drivers 1 6 Average Current from Vs Oscillation Frequency No Load, fs = 60KHz RT = 12K; CT = 1nF 57 Test Condition Min. 0.45 Typ. 0.5 Max. 0.55 Unit IAVE fout 1.2 60 1.5 63 mA kHz OSCILLATOR FREQUENCY The frequency of the internal oscillator can be programmed using external resistor and capacitor. The nominal oscillator frequency can be calculated using the following equation: 1 1 f O SC = ---------------------------------------- = ----------------------------------------1.3863 R F C F 2 R F C F In2 Where RF and CF are the external resistor and capacitor. The device can be driven in "shut down" condition keeping the CF pin close to GND, but some cares have to be taken: 1. When CF is to GND the high side driver is off and the low side is on 2. The forced discharge of the oscillator capacitor CF must not be shorter than 1us: a simple way to do this is to limit the current discharge with a resistive path imposing R * CF >1s (see fig.1) Figure 1. 1 2 R fault signal CF GNDM RF 3 4 8 7 6 5 Figure 2. Waveforms VS VSUVP VCF LVG T1 D96IN434 TC 4/8 L6571A L6571B Figure 3. Typical Dead Time vs. Temperature Dependency (L6571A) Dead time [sec] 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1 0 150 Tf 100 50 D96IN378A Figure 6. Typical Rise and Fall Times vs. Load Capacitance time [nsec] 300 250 Tr 200 D96IN417 0.9 -50 0 50 100 Temperature [C] 150 3 4 5 6 C [nF] For both high and low side buffers @25C Tamb 0 1 2 Figure 4. Typical Frequency vs Temperature Dependency Frequency [KHz] 65 64 63 62 61 60 59 58 57 56 55 -50 -25 0 25 50 75 Temperature [C] 100 125 D96IN379A Figure 7. Quiescent Current vs. Supply Voltage. Iq (A) 104 D96IN418 103 102 10 0 2 4 6 8 10 12 14 VS(V) Figure 5. Typical and Theoretical Oscillator Frequency vs Resistor Value f (KHz) 150 Theoretical 100 90 80 70 60 50 D96IN380 C=330pF C=560pF C=1nF 30 20 5 6 7 8 9 10 15 20 30 Resistor Value (Kohm) 40 50 5/8 L6571A L6571B DIM. MIN. A a1 a2 a3 b b1 C c1 D (1) E e e3 F (1) L M S 3.8 0.4 4.8 5.8 0.65 0.35 0.19 0.25 0.1 mm TYP. MAX. 1.75 0.25 1.65 0.85 0.48 0.25 0.5 0.026 0.014 0.007 0.010 0.004 MIN. inch TYP. MAX. 0.069 0.010 0.065 0.033 0.019 0.010 0.020 OUTLINE AND MECHANICAL DATA 45 (typ.) 5.0 6.2 1.27 3.81 4.0 1.27 0.6 8 (max.) 0.15 0.016 0.189 0.228 0.050 0.150 0.157 0.050 0.024 0.197 0.244 SO8 (1) D and F do not include mold flash or protrusions. Mold flash or potrusions shall not exceed 0.15mm (.006inch). 6/8 L6571A L6571B DIM. MIN. A a1 B b b1 D E e e3 e4 F I L Z 3.18 7.95 0.51 1.15 0.356 0.204 mm TYP. 3.32 0.020 1.65 0.55 0.304 10.92 9.75 2.54 7.62 7.62 6.6 5.08 3.81 1.52 0.125 0.313 0.045 0.014 0.008 MAX. MIN. inch TYP. 0.131 MAX. OUTLINE AND MECHANICAL DATA 0.065 0.022 0.012 0.430 0.384 0.100 0.300 0.300 0.260 0.200 0.150 0.060 Minidip 7/8 L6571A L6571B Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 2000 STMicroelectronics - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com (R) 8/8 |
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